Transistor
2SD1205, 2SD1205A
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
6.
9±0.
1
0.
4
Unit: mm
2.
5±0.
1 1.
0
1.
0 2.
4±0.
2 2.
0±0.
2 3.
5±0.
1
s Features
q
1.
5
1.
5 R0.
9 R0.
9
q
0.
85
0.
55±0.
1
1.
25±0.
05
0.
45±0.
05
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to 2SD1205 2SD1205A 2SD1205 VCEO VEBO ICP IC PC Tj Tstg Symbol VCBO
(Ta=25˚C)
3 2 1
Ratings 30 60 25 50 5 750 500 400 150 –55 ~ +150
Unit V
1:Base 2:Collector 3:Emitter
2.
5 2.
5
emitter
voltage 2SD1205A Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
V V mA mA mW ˚C ˚C
EIAJ:SC–71 M Type Mold...