Power Transistors
2SD1253, 2SD1253A
Silicon NPN triple diffusion planar type
For power amplification Complementary to 2SB930 and 2SB930A
s Features
q High forward current transfer ratio hFE which has satisfactory linearity q Low collector to emitter saturation
voltage VCE(sat) q N type package enabling direct soldering of the radiating fin to
the printed circuit board, etc.
of small electronic equipment.
s Absolute Maximum Ratings (TC=25˚C)
Parameter
Symbol
Ratings
Unit
Collector to 2SD1253 base
voltage 2SD1253A
VCBO
60 80
V
Collector to 2SD1253 emitter
voltage 2SD1253A
VCEO
60 80
V
Emitter to base
voltage
Peak collector current
Collector current
Collector power TC=25°C
...