isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage
: V(BR)CEO= 150V(Min) ·High Collector Power Dissipation ·Complement to Type 2SB940 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifications and TV vertical
deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
200
V
VCEO Collector-Emitter
Voltage
150
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
2
A
ICM
Collector Current-Peak
Total Power Dissipation @ Ta=25℃ PC Total Power Dissipation @ TC=25℃
TJ
Junction Temperature
3
A
2 W
3...