isc Silicon NPN Power Transistor
2SD1267
DESCRIPTION ·Low Collector Saturation
Voltage
: VCE(sat)= 1.
5V(Max)@ IC= 4A ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 60V (Min) ·Good Linearity of hFE ·Complement to Type 2SB942 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplification.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
60
V
VCEO
Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
4
A
ICM
Collector Current-Peak
Collector Power Dissipation @ TC=25℃ PC Collector Power Dissipation
@ Ta=25℃
TJ
Junction T...