isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD130
DESCRIPTION ·DC Current Gain -hFE = 15(Min)@ IC= 3A ·Collector-Emitter Breakdown
Voltage-
: V(BR) CEO= 60V(Min) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose amplifier and switching
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
100
V
VCEO
Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
10
V
IC
Collector Current-Continuous
3.
0
A
ICM
Collector Current-Peak
5.
0
A
IB
Base Current
1.
0
A
PC
Collector Power Dissipation@TC=25℃
25
W
TJ
Junction Tempe...