isc Silicon NPN Darlington Power Transistor
2SD1417
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 60V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 3V, IC= 3A) ·Low Collector Saturation
Voltage ·Complement to Type 2SB1022 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Power amplifier and switching applications ·Hammer drive,pulse motor drive applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
60
V
VCEO
Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
Collector Power Diss...