isc Silicon NPN Power Transistor
2SD1479
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·High Switching Speed ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for horizontal deflection output applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCES
Collector-Emitter
Voltage
1500
V
VCEO
Collector-Emitter
Voltage
700
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current- Continuous
2.
5
A
ICP
Collector Current-Peak
6
A
IBP
Base Current-Peak
Collector Power Dissipation @ Ta= 25℃ PC Collector Power Dissipation @ TC= 25℃
TJ
Junction Temper...