isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD1564
DESCRIPTION ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.
5V(Max) @IC= 2A ·High DC Current Gain
: hFE= 2000(Min) @IC= 2A ·Low Saturation
Voltage ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier and low speed
switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
50-70
V
VCEO
Collector-Emitter
Voltage
VEBO
Emitter-Base
Voltage
IC
Collector Current-Continuous
ICP
Collector Current-Peak
IB
Base Current-Continuous
PC
...