2SD1631
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT process) (Darlington power transistor)
2SD1631
Micro Motor Drive, Hammer Drive Applications Switching Applications Power Amplifier Applications
Unit: mm
· High DC current gain: hFE = 4000 (min) (VCE = 2 V, IC = 150 mA) · Low saturation
voltage: VCE (sat) = 1.
5 V (max) (IC = 1 A, IB = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Continuous collector current Continuous base current Collector power dissipation Junction temperature Storage temperature range
Symbol
VCBO VCEO VEBO
IC IB PC Tj Tstg
Rating
30 30 10 1.
5 50 1000 150 −55 to 150
Unit
V V V A mA mW...