Power Transistors
2SD1633
Silicon NPN triple diffusion planar type darlington
Unit: mm
0.
7±0.
1
For
voltage switching ■ Features
• High-speed switching • Satisfactory linearity of forward current transfer ratio hFE • Full-pack package which can be installed to the heat sink with one screw
16.
7±0.
3
10.
0±0.
2 5.
5±0.
2
4.
2±0.
2
4.
2±0.
2 2.
7±0.
2
7.
5±0.
2
φ 3.
1±0.
1
Solder Dip (4.
0)
14.
0±0.
5
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Base current Collector power dissipation Ta = 25°C Junction temperature Storage temperature Tj Tstg Symbol...