isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector–Emitter Sustaining
Voltage—
: VCEO(SUS) = 100V(min.
) ·DC Current Gain—
: hFE = 2000(Min.
) @ IC= 1.
5 A ·Complement to Type 2SB1149 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for general-purpose amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
150
V
VCEO
Collector-Emitter
Voltage
100
V
VEBO
Emitter-Base
Voltage
8
V
IC
Collector Current-Continuous
3
A
ICM
Collector Current-Peak
Collector Power Dissipation
Ta=25℃ PC
Collector Power Dissipation
TC=25℃
Ti
Junction Temperature
5
...