2SD1705

Power Transistors 2SD1705 Silicon NPN epitaxial planar type Unit: mm (0.7) For power switching Complementary to 2SB1154 21.0±0.5 15.0±0.3 11.0±0.2 5.0±0.2 (3.2) ■ Features • Low collector-emitter saturation voltage VCE(sat) • Satisfactory linearity of forward current transfer ratio hFE • Large collector current IC • Full-pack package which can be instal...