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SMD Type
Power Transistor 2SD1733
Features
High VCEO, VCEO=80V .
High IC, IC=1A (DC) .
Good hFE linearity .
+0.
2 9.
70 -0.
2
Transistors
TO-252
+0.
15 1.
50 -0.
15
Unit: mm 2.
30
+0.
8 0.
50-0.
7 +0.
1 -0.
1
6.
50 +0.
2 5.
30-0.
2
+0.
15 -0.
15
Low VCE (sat) .
Epitaxial planer type NPN silicon transistor
+0.
1 0.
80-0.
1
+0.
15 0.
50 -0.
15
0.
127 max
2.
3
+0.
15 4.
60-0.
15
+0.
1 0.
60-0.
1
+0.
28 1.
50 -0.
1
+0.
25 2.
65 -0.
1
+0.
15 5.
55 -0.
15
1 Base 2 Collector 3 Emitter
Absolute Maximum Ratings Ta = 25
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Collector power dissipation Tc = 25 Junction temperature Storage temperature * Pw=20ms.
Tj...