Power Transistors
2SD1755
Silicon NPN epitaxial planar type
For power amplification with high forward current transfer ratio
7.
2±0.
3 0.
8±0.
2
7.
0±0.
3 3.
0±0.
2 3.
5±0.
2
Unit: mm
1.
0±0.
2
q
q q
High forward current transfer ratio hFE which has satisfactory linearity High emitter to base
voltage VEBO I type package enabling direct soldering of the radiating fin to the printed circuit board, etc.
of small electronic equipment.
(TC=25˚C)
10.
0 –0.
+0.
3
s Features
1.
1±0.
1 0.
75±0.
1
0.
85±0.
1 0.
4±0.
1
2.
3±0.
2 4.
6±0.
4 1 2 3
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Base current Col...