Silicon Epitaxial Planar Transistor
FEATURES
Low VCE(sat).
(Typ.
8mV at IC/IB=10/1mA).
Optimal for muting.
Power dissipation.
PD=200mW.
Pb
Lead-free
Production specification
2SD1757
APPLICATIONS
Audio frequency general.
ORDERING INFORMATION
Type No.
Marking
2SD1757
AAQ/AAR/AAS
SOT-23
Package Code SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
VCBO
Collector-Base
Voltage
30
VCEO
Collector-Emitter
Voltage
15
VEBO
Emitter-Base
Voltage
6.
5
IC Collector Current -Continuous
500
PC Collector Dissipation
200
Tj,Tstg
Junction and Storage Temperature
-55 to +150
Units V V V mA mW ℃
C156 Rev.
A
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