Transistor
2SD1823
Silicon NPN epitaxial planer type
For low-frequency amplification
Unit: mm
s Features
q q q q q
2.
1±0.
1 0.
425 1.
25±0.
1 0.
425
High foward current transfer ratio hFE.
Low collector to emitter saturation
voltage VCE(sat).
High emitter to base
voltage VEBO.
Low noise
voltage NV.
S-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
0.
65
1
2.
0±0.
2
1.
3±0.
1
0.
65
3
2
0.
2
(Ta=25˚C)
Ratings 50 40 15 100 50 150 150 –55 ~ +150 Unit V V V mA mA mW ˚C ˚C
0.
7±0.
1
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector cur...