isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 100V(Min) ·High Current Capability ·Wide Area of Safe Operation ·Complement to Type 2SB1231 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for motor drivers, relay drivers, converters and
other general high-current switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
110
V
VCEO
Collector-Emitter
Voltage
100
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
25
A
ICP
Collector Current-Pulse
40
A
IB
Base Current-Continuous
Collector Power Di...