isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 120V(Min) ·High DC Current Gain-
: hFE= 2000(Min)@ (VCE= 3V, IC= 2A) ·Complement to Type 2SB1340 ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
120
V
VCEO
Collector-Emitter
Voltage
120
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
6
A
ICM
Collector Current-Peak
Collector Power Dissipation
@Ta=25℃ PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
10
A...