2SD1963
Transistors
Power transistor (50V, 3A)
2SD1963
zFeatures 1) Low saturation
voltage, typically www.
DataSheet4U.
com VCE(sat) = −0.
45V (Max.
) at IC/IB = −1.
5A / −0.
15A.
2) Excellent DC current gain characteristics.
3) Complements the 2SB1308.
zExternal dimensions (Unit : mm)
MPT3
4.
5 1.
6
0.
5
1.
5
(1)
(2)
(3)
1.
0
2.
5 4.
0
0.
4
0.
4 1.
5
0.
5 1.
5 3.
0
0.
4
(1)Base (2)Collector (3)Emitter
zAbsolute maximum ratings (Ta=25°C)
Parameter Collector-base
voltage Collector-emitter
voltage Emitter-base
voltage Collector current Symbol VCBO VCEO VEBO IC Limits 50 20 6 3 5 0.
5 2.
0 150 −55 to 150 Unit V V V A(DC) A(Pulse) W W
∗1 ∗2
Collector power dissipation Junction temperature Storage tempe...