INCHANGE Semiconductor
isc Silicon NPN Power Transistor
2SD2012
DESCRIPTION ·High DC Current Gain-
: hFE= 100 (Min)@ IC= 0.
5A ·Low Saturation
Voltage-
: VCE(sat)= 1.
0V (Max) ·High Power Dissipation
: PC= 25 W(Max)@ TC= 25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for audio frequency power amplifier
applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
60
V
VCEO
Collector-Emitter
Voltage
60
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
3
A
IB
Base Current-Continuous
Collector Power Dissipation
@ Ta=25℃ PC
Collector Power Dissipation
@ T...