Transistor
2SD2067 (Tentative)
Silicon NPN epitaxial planer type
6.
9±0.
1 1.
05 2.
5±0.
1 ±0.
05
Unit: mm
(1.
45) 0.
8
0.
5 4.
5±0.
1
For low-frequency output amplification
0.
15
0.
7
4.
0
q q q q q
Darlington connection.
High foward current transfer ratio hFE.
Large peak collector current ICP.
High collector to emitter
voltage VCEO.
Allowing supply with the radial taping.
0.
45–0.
05
0.
45–0.
05
+0.
1
+0.
1
2.
5±0.
5 1 2
2.
5±0.
5 3
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature
*
(Ta=25˚C)
Ratings 120 100 5 3 2 1 150 –55 ...