isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2091
DESCRIPTION ·High DC Current Gain-
: hFE = 1000(Min)@ IC= 1A ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat) = 1.
5V(Max)@ IC= 1A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Low-frequency power amplifier amplifications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
80-110
V
VCEO
Collector-Emitter
Voltage
80-110
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
2
A
ICM
Base Current-Peak
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction T...