Power Transistors
2SD2133
Silicon NPN epitaxial planar type
For low-frequency power amplification driver
7.
5±0.
2
Unit: mm
4.
5±0.
2
• Low collector-emitter saturation
voltage VCE(sat)
10.
8±0.
2
0.
65±0.
1
16.
0±1.
0
■ Absolute Maximum Ratings TC = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 60 50 5 1 1.
5 1.
5 150 −55 to +150 Unit V V V A A W °C °C
2.
5±0.
1
0.
85±0.
1 1.
0±0.
1 0.
8 C
90˚
■ Features
3.
8±0.
2
0.
8 C
0.
7±0.
1 0.
7±0.
1 1.
15±0.
2 1.
15±0.
2
0.
5±0.
1...