isc Silicon NPN Darlington Power Transistor
INCHANGE Semiconductor
2SD2141
DESCRIPTION ·High DC Current Gain-
: hFE = 1500(Min)@ IC= 3A ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat) = 1.
5V(Max)@ IC= 4A ·Incorporating a built-in zener diode ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in ignitor, driver for solenoid，motor and
general purpose applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
VCEO
Collector-Emitter
Voltage
VEBO
Emitter-Base
Voltage
IC
Collector Current-Continuous
ICM
Base Current-Peak
IB
Base Current-Continuous
PC
Collector Power...