DATA SHEET
SILICON POWER TRANSISTOR
2SD2164
NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER
AMPLIFIERS AND LOW-SPEED SWITCHING
The 2SD2164 is a single power transistor developed especially for high hFE.
This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor.
In addition, this transistor features a small resin insulated package, thus contributing to high-density mounting and mounting cost reduction.
PACKAGE DRAWING (UNIT: mm)
FEATURES
• High hFE and low VCE(sat): hFE ≅ 1,300 TYP.
(VCE = 5.
0 V, IC = 0.
5 A) VCE(SAT) ≅ 0.
3 V TYP.
(IC = 2.
0 A, IB = 20 mA) • Ful...