Transistors
Power Transistor (31±4V, 2A)
2SD2167
2SD2167
zFeatures 1) Built-in zener diode between collector and base.
2) Zener diode has low
voltage dispersion.
3) Strong protection against reverse power surges due
to low loads.
4) PC=2 W (on 40×40×0.
7mm ceramic board)
zExternal dimensions (Unit : mm)
3.
0 1.
5 1.
5 0.
4 0.
4 0.
4 0.
5 1.
5 1.
6
4.
5
ROHM : MPT3 EIAJ : SC-62
4.
0 1.
0 2.
5 0.
5
(1) (2) (3)
(1) Base (2) Collector (3) Emitter
zAbsolute maximum ratings (Ta = 25°C)
Parameter
Symbol
Limits
Collector-base
voltage Collector-emitter
voltage
VCBO VCEO
31±4 31±4
Emitter-base
voltage Collector current
VEBO IC
5 2 3
Collector power dissipation
PC
0.
5 2
Junction temperature
Tj 1...