Transistor
2SD2216
Silicon NPN epitaxial planer type
For general amplification Complementary to 2SB1462
1.
6±0.
15
Unit: mm
s Features
q q q
0.
4
0.
8±0.
1
0.
4
0.
2–0.
05 0.
15–0.
05
+0.
1
High foward current transfer ratio hFE.
Low collector to emitter saturation
voltage VCE(sat).
SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing.
1.
6±0.
1
1.
0±0.
1
0.
5
1
0.
5
3
2
0.
45±0.
1 0.
3
0.
75±0.
15
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO ...