Power Transistors
2SD2250
Silicon NPN triple diffusion planar type Darlington
For power amplification Complementary to 2SB1490
φ 3.
3±0.
2 5.
0±0.
3 3.
0
Unit: mm
20.
0±0.
5
s Features
q q q
6.
0
1.
5
1.
5
Solder Dip
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power TC=25°C dissipation Ta=25°C Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
20.
0±0.
5 2.
5
2.
0±0.
3 3.
0±0.
3 1.
0±0.
2
(TC=25˚C)
Ratings 160 140 5 12 7 90 3.
5 150 –55 to +150 Unit V V V A
2.
7±0.
3
0.
6±0.
2 5.
45±0.
3 10.
9±0.
5
1
2
3
A W ˚C ˚C
1:Base 2:Collector 3:Emitter TOP–3L ...