isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 80V(Min) ·Collector Power Dissipation-
: PC= 25W@ TC= 25℃ ·Good Linearity of hFE ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
80
V
VCEO
Collector-Emitter
Voltage
80
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
4
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=25℃
TJ
Junction Temperature
0.
4
A
25
W
150
℃
Tstg
Storage Temperature
-55~150 ℃
2SD2406...