Transistor
2SD2416
Silicon NPN epitaxial planer type darlington
For low-frequency amplification
Unit: mm
s Features
q q q q
4.
5±0.
1 1.
6±0.
2
1.
5±0.
1
High foward current transfer ratio hFE.
60V zener diode built in between collector and base.
Darlington connection.
Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine packing.
2.
6±0.
1
0.
4max.
45°
1.
0–0.
2
+0.
1
0.
4±0.
08 0.
5±0.
08 1.
5±0.
1 3.
0±0.
15 3 2 1
4.
0–0.
20
0.
4±0.
04
s Absolute Maximum Ratings
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation Junction...