Power Transistors
2SD2420
Silicon NPN triple diffusion planer type Darlington
Unit: mm
For power amplification I Features
• High forward current transfer ratio hFE: 2 000 to 10 000 • Dielectric breakdown
voltage of the package: 5 kV
9.
9±0.
3
3.
0±0.
5
4.
6±0.
2 2.
9±0.
2
13.
7±0.
2 4.
2±0.
2 Solder Dip
15.
0±0.
5
φ 3.
2±0.
1
I Absolute Maximum Ratings TC = 25°C
Parameter Collector to base
voltage Collector to emitter
voltage Emitter to base
voltage Peak collector current Collector current Collector power dissipation TC = 25°C Ta = 25°C Tj Tstg Symbol VCBO VCEO VEBO ICP IC PC Rating 60 60 5 8 4 40 2.
0 150 −55 to +150 °C °C Unit V V V A A W
1.
4±0.
2 1.
6±0.
2 0.
8±0.
1
2.
6±0.
1
0.
55±0.
15
2.
54±0.
30 5.
...