TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2440
Switching Application
2SD2440
Unit: mm
· High breakdown
voltage: VCBO = 100 V : VEBO = 18 V
· Low saturation
voltage: VCE (sat) = 1.
2 V (max) (IC = 5 A, IB = 1 A) · High speed: tf = 1 µs (typ.
) (IC = 5 A, IB = ±0.
5 A) · High DC current gain: hFE = 200 (min) (VCE = 5 V, IC = 0.
5 A)
Maximum Ratings (Ta = 25°C)
Characteristics
Collector-base
voltage
Collector-emitter
voltage
Emitter-base
voltage
Collector current
DC Pulse
Base current
Collector power dissipation
(Tc = 25°C)
Junction temperature
Storage temperature range
Symbol
VCBO VCEO VEBO
IC ICP IB
PC
Tj Tstg
Rating
100 60 18 6 12 2
40
150 −55 to 150
Unit V V V
A
A
...