Power Transistors
2SD2479
Silicon NPN epitaxial planar type
Unit: mm
For low-frequency amplification
10.
8±0.
2
7.
5±0.
2 3.
8±0.
2
4.
5±0.
2
■ Features
• High forward current transfer ratio hFE • Allowing supply with the radial taping
0.
65±0.
1 2.
5±0.
1
0.
85±0.
1 1.
0±0.
1 0.
8 C
90˚
0.
8 C
16.
0±1.
0
0.
7±0.
1 0.
7±0.
1 1.
15±0.
2 1.
15±0.
2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base
voltage (Emitter open) Collector-emitter
voltage (Base open) Emitter-base
voltage (Collector open) Collector current Peak collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Rating 120 100 5 2 3 1.
5 150 −55 to +150 Unit V V V A A ...