isc Silicon NPN Darlington Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 200V(Min) ·High DC Current Gain-
: hFE= 1500( Min.
) @(IC= 1A, VCE= 5V) ·Low Collector Saturation
Voltage-
: VCE(sat)= 1.
5V(Max)@ (IC= 1A, IB= 5mA) ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for series regulator and general purpose
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE UNIT
VCBO
Collector-Base
Voltage
200
V
VCEO
Collector-Emitter
Voltage
200
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
5
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC...