isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD318
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 60V(Min) ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.
2V(Max) @IC= 3.
0A ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in general purpose power amplifier and
switching applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO VCEO VEBO
Collector-Base
Voltage Collector-Emitter
Voltage Emitter-Base
Voltage
60
V
60
V
8
V
IC
Collector Current-Continuous
3.
0
A
ICM
Collector Current-Peak
Collector Power Dissipation
PC
@ Ta=25℃ Collector Power Dissipati...