isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD437
DESCRIPTION ·High Collector-Emitter Breakdown
Voltage-
: = V(BR)CEO 350V (Min) ·High Switching Speed ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for use in power amplifier and switching regulator
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base
Voltage
600
V
VCEO
Collector-Emitter
Voltage
350
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
10
A
ICM
Collector Current-Peak
PC
Collector Power Dissipation @TC=25℃
Tj
Junction Temperature
15
A
80
W
150...