isc Silicon NPN Power Transistors
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 400V(Min) ·High Power Dissipation-
: PC= 80W(Max)@TC=25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for high power amplifier and switching applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
600
V
VCER
Collector-Emitter
Voltage RBE= 50Ω
600
V
VCEO
Collector-Emitter
Voltage
400
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
5
A
ICM
Collector Current-Peak
10
A
IB
Base Current-Continuous
2
A
IBM
Base Current-Peak
PC
Collector Power ...