isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD536
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS) = 200V(Min) ·Excellent Safe Operating Area ·High Current Capability ·Low collector saturation
voltage ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Switching regulators ·DC-DC converters.
·General purpose power
amplifiers.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
200
V
VCEO Collector-Emitter
Voltage
200
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=25℃
TJ
Junction ...