isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD640
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 400V (Min) ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat)= 1.
5V (Max.
)@ IC= 5A ·Excellent Safe Operating Area ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High
voltage switching applications.
·High power amplifier applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
MAX
UNIT
VCBO
Collector-Base
Voltage
600
V
VCEO
Collector-Emitter
Voltage
400
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
7
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @TC=2...