isc Silicon NPN Power Transistor
DESCRIPTION ·Collector-Emitter Breakdown
Voltage-
: V(BR)CEO= 50V (Min) ·Low Collector-Emitter Saturation
Voltage-
: VCE(sat)= 0.
4V (Max)@IC= 6.
0A ·High Collector Power Dissipation
: PC= 80W @TC=25℃ ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·High power switching applications ·DC-DC converter and DC-AC inverter applications
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
70
V
VCEO
Collector-Emitter
Voltage
50
V
VEBO
Emitter-Base
Voltage
5
V
IC
Collector Current-Continuous
10
A
IB
Base Current-Continuous
PC
Collector Power Dissipation @ TC=...