isc Silicon NPN Power Transistor
2SD792
DESCRIPTION ·High Breakdown
Voltage-
: VCBO= 1500V (Min) ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Designed for line-operated horizontal deflection output
applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
1500
V
VCE0
Collector-Emitter
Voltage
700
V
VEBO
Emitter-Base
Voltage
4
V
IC
Collector Current- Continuous
5
A
ICP
Collector Current-Pulse
PC
Collector Power Dissipation @ TC≤90℃
TJ
Junction Temperature
7
A
35
W
130
℃
Tstg
Storage Temperature Range
-65~130
℃
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