isc Silicon NPN Power Transistor
INCHANGE Semiconductor
2SD867
DESCRIPTION ·Collector-Emitter Sustaining
Voltage-
: VCEO(SUS)= 110V(Min).
·Excellent Safe Operating Area ·Low collector saturation
voltage
: VCE(sat)= 3.
0V(Max)@ IC = 10A ·Minimum Lot-to-Lot variations for robust device performance
and reliable operation.
APPLICATIONS ·High
voltage high current power transistors
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO
Collector-Base
Voltage
130
V
VCEO
Collector-Emitter
Voltage
110
V
VEBO
Emitter-Base
Voltage
7
V
IC
Collector Current-Continuous
10
A
ICP
Collector Current-Peak
15
A
IB
Base Current-Continuous
7
A
PC
Collector Power Dissipa...