INCHANGE Semiconductor
isc Silicon NPN Darlington Power Transistor
2SD929
DESCRIPTION ·High DC Current Gain
: hFE= 700(Min.
)@ IC= 1A, VCE= 4V ·High Collector-Emitter Breakdown
Voltage-
: V(BR)CEO = 180V(Min) ·High Reliability ·Good Linearity of hFE ·Wide Area of Safe Operation ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
APPLICATIONS ·Color & B/W TV power supply ·Active power filter ·Series regulators ·General purpose power
amplifiers
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
UNIT
VCBO Collector-Base
Voltage
200
V
VCEO Collector-Emitter
Voltage
180
V
VEBO
Emitter-Base
Voltage
6
V
IC
Collector Current-Continuous
5
A
...