2SJ349
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2−π−MOSV)
2SJ349
DC−DC Converter, Relay Drive and Motor Drive Applications
Unit: mm
z 4-V gate drive
z Low drain−source ON-resistance : RDS (ON) = 33 mΩ (typ.
)
z High forward transfer admittance : |Yfs| = 20 S (typ.
)
z Low leakage current
: IDSS = −100 μA (max) (VDS = −60 V)
z Enhancement mode: Vth = −0.
8 to −2.
0 V (VDS = −10 V, ID = −1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain−source
voltage
Drain−gate
voltage (RGS = 20 kΩ) Gate−source
voltage
Drain current
DC (Note 1) Pulse(Note 1)
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy (Note 2)
Avalanch...