DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ606
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ606 is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SJ606 2SJ606-S 2SJ606-ZJ 2SJ606-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD
Note
FEATURES
• Super low on-state resistance: RDS(on)1 = 15 mΩ MAX.
(VGS = −10 V, ID = −42 A) RDS(on)2 = 23 mΩ MAX.
(VGS = −4.
0 V, ID = −42 A) • Low input capacitance: Ciss = 4800 pF TYP.
(VDS = −10 V, VGS = 0 V) • Built-in gate protection diode
Note TO-220SMD package is produced only in Japan
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V)
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