DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ607
SWITCHING P-CHANNEL POWER MOS FET
DESCRIPTION
The 2SJ607 is P-channel MOS Field Effect Transistor designed for high current switching applications.
ORDERING INFORMATION
PART NUMBER 2SJ607 2SJ607-S 2SJ607-ZJ 2SJ607-Z PACKAGE TO-220AB TO-262 TO-263 TO-220SMD
Note
FEATURES
• Super low on-state resistance: RDS(on)1 = 11 mΩ MAX.
(VGS = −10 V, ID = −42 A) RDS(on)2 = 16 mΩ MAX.
(VGS = −4.
0 V, ID = −42 A) • Low input capacitance: Ciss = 7500 pF TYP.
(VDS = −10 V, VGS = 0 V) • Built-in gate protection diode
Note TO-220SMD package is produced only in Japan
(TO-220AB)
ABSOLUTE MAXIMUM RATINGS (TA = 25°C)
Drain to Source
Voltage (VGS = 0 V)
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