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Ordering number : ENN7178A
2SJ612
P-Channel Silicon
MOSFET
2SJ612
Ultrahigh-Speed Switching Applications
Preliminary Features
• • •
Package Dimensions
unit : mm 2062A
[2SJ612]
4.
5 1.
6 1.
5
Low ON-resistance.
Ultrahigh-speed switching.
2.
5V drive.
0.
5
3
1.
5
2
3.
0
1
1.
0
0.
4
2.
5 4.
25max
0.
4
(Bottom view)
0.
75
1 : Gate 2 : Drain 3 : Source SANYO : PCP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Mounted on a ceramic board (250mm2!0.
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