com
Ordering number : ENN7552
2SJ658
P-Channel Silicon
MOSFET
2SJ658
High-Speed Switching Applications
Features
• • •
Package Dimensions
unit : mm 2178
[2SJ658]
5.
0 4.
0 4.
0
Low ON-resistance.
High-speed switching.
2.
5V drive.
0.
45 0.
5
0.
6 2.
0
5.
0
0.
45
0.
44
1
2
3
14.
0
1 : Source 2 : Drain 3 : Gate
1.
3
1.
3
SANYO : NP
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg PW≤10µs, duty cycle≤1% Conditions Ratings -20 ±10 --2 --8 0.
7 150 --55 to +150 Unit V V A A W °C ...