Ordering number : EN8589
2SJ664
P-Channel Silicon
MOSFET
2SJ664
Features
• • • • •
General-Purpose Switching Device Applications
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Motor drive, DC / DC converter.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter Drain-to-Source
Voltage Gate-to-Source
Voltage Drain Current (DC) Drain Current (Pulse)
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Symbol VDSS VGSS ID IDP PD Tch Tstg EAS IAV
Conditions
Ratings --100 ±20 --17
Unit V V A A W W °C °C mJ A
PW≤10µs, duty cycle≤1% Tc=25°C
--68 1.
65 50 150 --55 to +150 38 --17
Allowable Power Dissipation Channel Temperature Storage Temperature Avalanche Energy (Single P...