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DATA SHEET
MOS FIELD EFFECT TRANSISTOR
2SJ687
SWITCHING P-CHANNEL POWER
MOSFET
DESCRIPTION
The 2SJ687 is P-channel
MOSFET device and a excellent switch that can be driven by a low power-supply
voltage.
FEATURES
• Low on-state resistance RDS(on)1 = 7.
0 mΩ MAX.
(VGS = −4.
5 V, ID = −10 A) RDS(on)2 = 9.
0 mΩ MAX.
(VGS = −3.
0 V, ID = −10 A) RDS(on)3 = 20 mΩ MAX.
(VGS = −2.
5 V, ID = −10 A) • 2.
5 V drive available • Avalanche capability ratings
ORDERING INFORMATION
PART NUMBER 2SJ687-ZK-E1-AY 2SJ687-ZK-E2-AY
Note Note
LEAD PLATING Pure Sn (Tin)
PACKING Tape 2500 p/reel
PACKAGE TO-252 (MP-3ZK) 0.
27 g TYP.
Note Pb-free (This product does not contain Pb in external electro...